Micron Technology DRAM SDRAM, Part #MT41K512M8DA-107 AAT:P TR | Dynamic random access memory | DEX integrated circuit MT40A512M16LY-062E:E

MT40A512M16LY-062E:E

MT53E384M32D2DS-053 AAT:E

The TPS715 is available in both fixed and adjustable versions

No Latency ∆∑™ ADC with Easy Drive technology

2 CAN channels

Micron Technology DRAM SDRAM, Part #MT41K512M8DA-107 AAT:P TR | Dynamic random access memory | DEX integrated circuit MT40A512M16LY-062E:EDDR3L SDRAM (1. 35V) is a low voltage version of the DDR3 (1. 5V) SDRAM. Features VDD = VDDQ = 1. 35V (1. 2831. 45V) Backward compatible to VDD = VDDQ = 1. 5V 0. 075V Supports DDR3L devices to be backward compatible in 1. 5V applications Differential bidirectional data strobe 8n bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on die termination (ODT) for data, strobe, and mask signals Programmable CAS